Contact and Sheet Resistance

ContactSpot

Measure critical resistivities between gridlines and silicon or layer sheet resistivities

Measure contact resistivity between the metal gridlines and the semiconductor, the line resistance of the gridlines, and sheet resistances of various conductive layers for both R&D experiments and factory QC.

Specifications

Metal gridline measurement

Contact resistivity to silicon (mΩ-cm²)
Line resistance (mΩ/cm)
Sheet resistance between gridlines (Ω/square)
< 30 sec/test including sample loading & alignment
10 current injection and 10 voltage measurement probes
Microscope with screen display and x-theta adjustment for fast sample alignment
Correction factors for voltage drop down narrow fingers

Benefits

Benefits over manual contact resistivity measurements

Much faster test time
More consistent results
No room-light artifacts
Mapping across the test strip
Automated data analysis
Advanced algorithms

Advanced Algorithms and custom made probeheads

Correct for the voltage drop down narrow gridline in the TLM method by measuring line resistance. Enables wider strips to be cut for measurements without line resistance distortions

Use strips cut from cells or dedicated TLM patterns with variable spacings between pads

Use circular TLM patterns where no strip cutting is necessary

Measure:

Contact Resistivity

Semiconductor Sheet Resistance

Line Resistance

Conductive Adhesives

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